| PART |
Description |
Maker |
| BT138-600 BT138 |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SemiWell Semiconductor
|
| BT138F-600 BT138F |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
| Z8916924VSC Z8916520VSC |
8-BIT MICROCONTROLLER
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 8位微控制
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ON Semiconductor
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| BD437/D |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 塑料中功率硅NPN晶体
|
Crydom, Inc.
|
| Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 40A条口（T）的有效值|18
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 5A条口（T）的有效值|20
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 25A条口（T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 4A条口T）的有效值|20
TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 3A条口（T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|20
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五（DRM）的| 40A条口（T）的有效值|18
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|18
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|02
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 700V的五（DRM）的| 25A条口（T）的有效值|20
可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|300V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-39
TRIAC|600V V(DRM)|8A I(T)RMS|TO-202
TRIAC|500V V(DRM)|8A I(T)RMS|TO-202
TRIAC|200V V(DRM)|3A I(T)RMS|TO-202
TRIAC|500V V(DRM)|25A I(T)RMS|TO-220
TRIAC|200V V(DRM)|8A I(T)RMS|TO-202
TRIAC|600V V(DRM)|3A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-202
TRIAC|800V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13
TRIAC|500V V(DRM)|15A I(T)RMS|TO-3
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|20A I(T)RMS|TO-220
TRIAC|200V V(DRM)|6A I(T)RMS|TO-220
TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|10A I(T)RMS|TO-8
RF inductor, ceramic core, 5% tol, SMT, RoHS
TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|200V V(DRM)|15A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
|
Samsung Semiconductor Co., Ltd.
Vishay Intertechnology, Inc.
STMicroelectronics N.V.
Xicon Passive Components
Anpec Electronics, Corp.
Littelfuse, Inc.
International Rectifier, Corp.
Motorola Mobility Holdings, Inc.
Electronic Theatre Controls, Inc.
Mitsubishi Electric, Corp.
Jiangsu Changjiang Electronics Technology Co., Ltd.
GTM, Corp.
|
| BT139F |
600V Vdrm 16A Triac, 1.6V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
|
SemiWell Semiconductor
|
| PC3SH21YIPB PC3SH21YFZ |
1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER SMT, PLASTIC, DIP-4
VDRM : 600V, Reinforced insulation type Zero cross type DIP 4pin Phototriac Coupler for triggering
|
Sharp Electronics, Corp.
Sharp Electrionic Components
|
| STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CONNECTOR ACCESSORY
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
From old datasheet system
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| PC3SG21YIZ |
VDRM 600V, Reinforced Insulation Type
|
Sharp Electrionic Components
|
| IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
|
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